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MMBT4403
TRANSISTOR (PNP)
FEATURES
Switching transistor SOT-23
MARKING MMBT4403=2T
1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)
2. EMITTER
Symbol Parameter Value Units
3. COLLECTOR
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC= -150mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V
VCE= -10V, IC= -20mA
Transition frequency fT 200 MHz
f = 100MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMBT4403
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMBT4403
3
JinYu www.htsemi.com
semiconductor
Date:2011/05
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