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MMBT5401
TRANSISTOR(PNP)
SOT-23
FEATURES 1. BASE
2. EMITTER
Complementary to MMBT5551
3. COLLECTOR
Ideal for medium power amplification and switching
-
MARKING: 2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A
hFE1 VCE= -5V, IC= -1mA 80
DC current gain hFE2 VCE= -5V, IC=-10mA 100 300
hFE3 VCE= -5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5mA -1 V
VCE= -5V, IC= -10mA
Transition frequency fT 100 MHz
f=30MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMBT5401
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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