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                                                                                                  MMBTA13,14

TRANSISTOR (NPN)
FEATURES                                                                                   SOT-23
   Darlington Amplifier
                                                                                                                                 Unit : mm

Marking : MMBTA13:K2D; MMBTA14:K3D                                                         1. BASE
                                                                                           2. EMITTER

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                             3. COLLECTOR


      Symbol                     Parameter                        Value         Units
     VCBO        Collector-Base Voltage                             30            V
     VCEO        Collector-Emitter Voltage                          30            V
     VEBO        Emitter-Base Voltage                               10            V
     IC          Collector Current -Continuous                      0.3           A
     PC          Collector Power Dissipation                       300            mW
     RJA         Thermal Resistance Junction to Ambient            417            /W
     TJ          Junction Temperature                              150            
     Tstg        Storage Temperature                            -55 to +150       



 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                          Symbol           Test   conditions                 MIN                    MAX          UNIT

     Collector-base breakdown voltage             V(BR)CBO      IC= 100A,     IE=0                      30                                   V

     Collector-emitter breakdown voltage          V(BR)CEO      IC= 100uA, IB=0                         30                                   V

     Collector-emitter breakdown voltage          V(BR)EBO      IE= 100A, IC=0                          10                                   V

     Collector cut-off current                    ICBO*         VCB=30 V , IE=0                                             0.1              A

     Emitter cut-off current                      IEBO*         VEB= 10V ,    IC=0                                          0.1              A
                                                                VCE=5V, IC= 10mA        MMBTA13      5000
                                                  hFE(1) *
                                                                                        MMBTA14      10000
     DC current gain
                                                                VCE=5V, IC= 100mA       MMBTA13      10000
                                                  hFE(2) *
                                                                                        MMBTA14      20000

     Collector-emitter saturation voltage         VCE (sat)*    IC=100mA, IB=0.1mA                                          1.5              V

     Base-emitter saturation voltage              VBE (sat) *   IC=100mA, IB=0.1mA                                           2               V

     Base-emitter voltage                         VBE *         VCE=5V,IC= 100mA                                            2.0              V

                                                                VCE=5V,   IC= 10mA
     Transition frequency                         fT                                                 125                                 MHz
                                                                f=100MHz
     Collector output capacitance                 Cob           VCB=10V,IE=0,f=1MHz                                         12               pF


* Pulse Test : pulse width300s,duty cycle2%.


 1




 JinYu                                           www.htsemi.com
 semiconductor

                                                                                                             Date:2011/05
                                 MMBTA13,14




2




JinYu           www.htsemi.com
semiconductor

                                     Date:2011/05
                                 MMBTA13,14




3




JinYu           www.htsemi.com
semiconductor

                                     Date:2011/05

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