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                                                                                                             MMBTA92



TRANSISTOR(PNP)
                                                                                              SOT-23

 FEATURES
                                                                                              1. BASE
                                                                                              2. EMITTER
           High voltage transistor                                                            3. COLLECTOR



MARKING:2D

MAXIMUM RATINGS (TA=25 unless otherwise noted)

           Symbol                                      Parameter                              Value                        Units
VCBO                       Collector-Base Voltage                                              -300                         V
VCEO                       Collector-Emitter Voltage                                           -300                         V
VEBO                       Emitter-Base Voltage                                                 -5                          V
IC                         Collector Current -Continuous                                       -300                        mA
PC                         Collector Power Dissipation                                         300                         mW
Tj                         Junction Temperature                                                150                          
Tstg                       Storage Temperature                                                -55-150                       
RJA                        Thermal Resistance, junction to Ambient                             410                         /mW


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                    Parameter                              Symbol         Test   conditions      MIN         MAX                UNIT

         Collector-base breakdown voltage                  V(BR)CBO   IC= -100A, IE=0            -300                              V

         Collector-emitter breakdown voltage               V(BR)CEO   IC= -1mA, IB=0             -300                              V

         Emitter-base breakdown voltage                    V(BR)EBO   IE= -100A, IC=0             -5                               V

         Collector cut-off current                           ICBO     VCB=-200V, IE=0                        -0.25                 A
         Emitter cut-off current                             IEBO     VEB= -5V, IC=0                         -0.1                  A
                                                            hFE(1)    VCE= -10V, IC= -1mA         60

         DC current gain                                    hFE(2)    VCE= -10V, IC=-10mA        100         200

                                                            hFE(3)    VCE= -10V, IC=-30mA         60

         Collector-emitter saturation voltage              VCE(sat)   IC=-20mA, IB= -2mA                     -0.2                  V

         Base-emitter saturation voltage                   VBE(sat)   IC= -20mA, IB= -2mA                    -0.9                  V
                                                                      VCE=-20V, IC= -10mA
         Transition frequency                                 fT                                  50                            MHz
                                                                      f=30MHz




     1




 JinYu                                                 www.htsemi.com
 semiconductor

                                                                                                              Date:201/5
                                 MMBTA92




2




JinYu           www.htsemi.com
semiconductor

                                  Date:201/5

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