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MMST2222A
TRANSISTOR(NPN)
SOT-323
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMST2907A) 1. BASE
MARKING: K3P 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=70 V, IE=0 100 nA
Collector cut-off current ICEO VCE=35V , IB=0 100 nA
Emitter cut-off current IEBO VEB= 3V , IC=0 100 nA
hFE(1) VCE=10V, IC=0.1mA 35
hFE(2) VCE=10V, IC= 1mA 50
hFE(3) VCE=10V, IC= 10mA 75
DC current gain
hFE(4) VCE=10V, IC= 150mA 100 300
hFE(5) VCE=10V, IC= 500mA 40
hFE(6) VCE=1V, IC= 150mA 35
IC=500 mA, IB= 50mA 1
Collector-emitter saturation voltage VCE(sat) V
IC=150 mA, IB=15mA 0.3
IC=500 mA, IB= 50mA 2.0
Base-emitter saturation voltage VBE(sat) V
IC=150 mA, IB=15mA 1.2
VCE=20V, IC= 20mA
Transition frequency fT 300 MHz
f=100MHz
Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF
Delay time td VCC=30V, VBE(off)=-0.5V 10 nS
Rise time tr IC=150mA , IB1= 15mA 25 nS
Storage time tS VCC=30V, IC=150mA 225 nS
Fall time tf IB1=-IB2=15mA 60 nS
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMST2222A
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:201/5
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