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PXT2222A
TRANSISTOR (NPN)
SOT-89
FEATURES
1. BASE
Epitaxial planar die construction
Complementary PNP Type available(PXT2907A)
2. COLLECTOR 1
2
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10 A,IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0. 01 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 A
hFE(1) VCE=10V, IC= 0.1mA 35
hFE(2) VCE=10V, IC= 1mA 50
hFE(3) VCE=10V, IC= 10mA 75
DC current gain
hFE(4) VCE=10V, IC= 150mA 100 300
hFE(5) VCE=1V, IC= 150mA 50
hFE(6) VCE=10V, IC= 500mA 40
VCE(sat) IC=500mA, IB= 50mA 1 V
Collector-emitter saturation voltage
VCE(sat) IC=150mA, IB=15mA 0.3 V
VBE(sat) IC=500mA, IB=50mA 2.0 V
Base-emitter saturation voltage
VBE(sat) IC=150mA, IB=15mA 0.6 1.2 V
VCE=10V, IC=20mA
Transition frequency fT 300 MHz
f=100MHz
Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF
Delay time td VCC=30V, IC=150mA 10 nS
Rise time tr VBE(off)=0.5V,IB1=15mA 25 nS
Storage time tS VCC=30V, IC=150mA 225 nS
Fall time tf IB1=- IB2= 15mA 60 nS
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
PXT2222A
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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