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                                                                                        1. BASE
   Epitaxial planar die construction
   Complementary PNP Type available(PXT2907A)
                                                                                        2. COLLECTOR                  1
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                          3. EMITTER                            3
Symbol                    Parameter                 Value          Units
VCBO             Collector-Base Voltage                   75         V
VCEO             Collector-Emitter Voltage                40         V
VEBO             Emitter-Base Voltage                 6             V
IC               Collector Current -Continuous       600            mA
PC               Collector Power Dissipation          0.5            W
TJ               Junction Temperature                150             
Tstg             Storage Temperature              -55 +150           
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                  Parameter                       Symbol         Test    conditions       MIN          MAX                        UNIT
     Collector-base breakdown voltage             V(BR)CBO     IC= 10 A,IE=0               75                                      V
     Collector-emitter breakdown voltage          V(BR)CEO     IC= 10mA, IB=0              40                                      V
     Emitter-base breakdown voltage               V(BR)EBO     IE=10A, IC=0                6                                       V
     Collector cut-off current                      ICBO       VCB=60V, IE=0                           0. 01                      A
     Emitter cut-off current                        IEBO       VEB= 5V , IC=0                          0. 01                      A
                                                   hFE(1)      VCE=10V, IC= 0.1mA          35
                                                   hFE(2)      VCE=10V, IC= 1mA            50
                                                   hFE(3)      VCE=10V, IC= 10mA           75
     DC current gain
                                                   hFE(4)      VCE=10V, IC= 150mA         100          300
                                                   hFE(5)      VCE=1V,   IC= 150mA         50
                                                   hFE(6)      VCE=10V, IC= 500mA          40
                                                  VCE(sat)     IC=500mA, IB= 50mA                                     1            V
     Collector-emitter saturation voltage
                                                  VCE(sat)     IC=150mA, IB=15mA                         0.3                       V
                                                  VBE(sat)     IC=500mA, IB=50mA                         2.0                       V
     Base-emitter saturation voltage
                                                  VBE(sat)     IC=150mA, IB=15mA          0.6             1.2                      V
                                                               VCE=10V, IC=20mA
     Transition frequency                            fT                                   300                                     MHz
     Output Capacitance                             Cob        VCB=10V, IE= 0,f=1MHz                                  8           pF
     Delay time                                      td        VCC=30V, IC=150mA                            10                    nS
     Rise time                                       tr        VBE(off)=0.5V,IB1=15mA                       25                    nS
     Storage time                                    tS        VCC=30V, IC=150mA                       225                        nS
     Fall time                                       tf        IB1=- IB2= 15mA                              60                    nS




    Typical Characteristics




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