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PXT3906
TRANSISTOR(PNP)
SOT-89
FEATURES
Compliment to PXT3904 1. BASE
Low current
1
Low voltage 2. COLLECTOR
MARKING: 2A 2
MAXIMUM RATINGS (TA=25 unless otherwise noted)
3. EMITTER 3
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -6 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 A
cut-off current IEBO VEB=-6V,IC=0 -0.05 A
hFE(1) VCE=-1V,IC=-0.1mA 60
hFE(2) VCE=-1V,IC=-1mA 80
DC current gain hFE(3) VCE=-1V,IC=-10mA 100 300
hFE(4) VCE=-1V,IC=-50mA 60
hFE(5) VCE=-1V,IC=-100mA 30
VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V
VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V
Base-emitter saturation voltage
VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V
Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz
Collector capacitance Cc VCB=-5V,IE=0,f=1MHz 4.5 pF
Emitter capacitance Ce VEB=-0.5V,IC=0,f=1MHz 10 pF
VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
Noise figure NF 4 dB
RS=1K
Delay time td 35 nS
Rise time tr 35 nS
IC=-10mA , IB1=-IB2= -1mA
Storage time tS 225 nS
Fall time tf 75 nS
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
PXT3906
Typical characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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