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                                                                                                                                    S901 2

                                                                                                SOT-23
TRANSISTOR(PNP)
FEATURES
   Complementary to S9013                                                                       1. BASE
                                                                                                2. EMITTER
   Excellent hFE linearity
                                                                                                3. COLLECTOR


MARKING: 2T1


MAXIMUM RATINGS (TA=25 unless otherwise noted)
        Symbol                          Parameter                          Value        Units
 VCBO                  Collector-Base Voltage                               -40           V
 VCEO                  Collector-Emitter Voltage                            -25           V
 VEBO                  Emitter-Base Voltage                                  -5           V
 IC                    Collector Current -Continuous                       -500           mA
 PC                    Collector Power Dissipation                         300           mW
 Tj                    Junction Temperature                                150            
 Tstg                  Storage Temperature                              -55-150           

     ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

     Parameter                                         Symbol       Test     conditions          MIN           TYP                  MAX        UNIT

     Collector-base breakdown voltage                  V(BR)CBO   IC= -100A, IE=0                 -40                                          V

     Collector-emitter breakdown voltage               V(BR)CEO   IC= -1mA, IB=0                  -25                                          V

     Emitter-base breakdown voltage                    V(BR)EBO   IE=-100A, IC=0                   -5                                          V

     Collector cut-off current                         ICBO       VCB=-40V, IE=0                                                        -0.1   A

     Collector cut-off current                         ICEO       VCE=-20V, IB=0                                                        -0.1   A

     Emitter cut-off current                           IEBO       VEB= -5V, IC=0                                                        -0.1   A

     DC current gain                                   hFE        VCE=-1V, IC= -50mA              120                                   400

     Collector-emitter saturation voltage              VCE(sat)   IC=-500mA, IB= -50mA                                                  -0.6   V

     Base-emitter saturation voltage                   VBE(sat)   IC=-500mA, IB= -50mA                                                  -1.2   V

                                                                  VCE=-6V,        IC= -20mA
     Transition frequency                              fT                                         150                                          MHz
                                                                  f=30MHz

     Collector output capacitance                      Cob        VCB=-10V,IE=0,f=1MHz                                                   5      pF


 CLASSIFICATION OF hFE
            Rank                                L                                   H                                               J
            Range                         120-200                             200-350                            300-400


 1




 JinYu                                              www.htsemi.com
 semiconductor

                                                                                                                     Date:2011/05
                                              S901 2




2




JinYu           www.htsemi.com
semiconductor

                                 Date:201/5

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