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S901 3
TRANSISTOR(NPN) SOT-23
FEATURES 1. BASE
Complementary to S9012 2. EMITTER
Excellent hFE linearity 3. COLLECTOR
MARKING: J3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Collector cut-off current ICEO VCE=20V, IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE=1V, IC= 50mA 120 400
DC current gain
hFE(2) VCE=1V, IC=500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V
VCE=6V, IC= 20mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
S901 3
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
A,Apr,2011
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