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SS8 050
TRANSISTOR(NPN) SOT-23
1. BASE
FEATURES
2. EMITTER
Complimentary to SS8550 3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Collector cut-off current ICEO VCB=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE=1V, IC= 100mA 120 400
DC current gain
hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
VCE=10V, IC= 50mA
Transition frequency fT 100 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
SS8 050
0.5 1000
VCE = 1V
IB = 3.0mA
IC[A], COLLECTOR CURRENT
0.4
hFE, DC CURRENT GAIN
IB = 2.5mA
100
0.3 IB = 2.0mA
IB = 1.5mA
0.2
10
IB = 1.0mA
0.1
IB = 0.5mA
1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000 100
IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE(sat)
1000 10
100 1
VCE(sat)
10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
1000 1000
CURRENT GAIN BANDWIDTH PRODUCT
IE = 0 VCE = 10V
f = 1MHz
Cob [pF], CAPACITANCE
100 100
fT[MHz],
10 10
1 1
1 10 100 1 10 100 400
VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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