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STD1 23S
TRANSISTOR(NPN)
SOT-23
FEATURES
Low saturation medium current application 1. BASE
Extremely low collector saturation voltage 2. EMITTER
Suitable for low voltage large current drivers 3. COLLECTOR
High DC current gain and large current capability
Low on resistance : RON=0.6(Max.) (IB=1mA)
Marking:123
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 20 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 6.5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 350 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V (BR) CBO IC=50A, IE=0 20 V
Collector-emitter breakdown voltage V (BR) CEO IC =1mA, IB=0 15 V
Emitter-base breakdown voltage V (BR) EBO IE= 50A, IC=0 6.5 V
Collector cut-off current ICBO VCB= 20 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 A
DC current gain hFE VCE=1V, IC= 100mA 150
Collector-emitter saturation voltage VCE (sat) IC=500mA, IB= 50mA 0.3 V
Transition frequency fT VCE=5V, IC=50mA 260 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 5 pF
f=1KHz,IB=1mA,
On resistance RON 0.6
VIN=0.3V
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
STD1 23S
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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