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                                                                                                       PD - 90334F



                                                IRF230
REPETITIVE A ALANCHE AND dv/dt RATED
            V                              JANTX2N6758
        
HEXFET TRANSISTORS                       JANTXV2N6758
THRU-HOLE (TO-204AA/AE)          [REF:MIL-PRF-19500/542]
                                      200V, N-CHANNEL

Product Summary
 Part Number         BVDSS     RDS(on)    ID
   IRF230             200V     0.40       9.0A


                                                                                              TO-3
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
                                                                       Features:
The HEXFET transistors also feature all of the well estab-             n   Repetitive Avalanche Ratings
lished advantages of MOSFETs such as voltage control,                  n   Dynamic dv/dt Rating
very fast switching, ease of paralleling and temperature               n   Hermetically Sealed
stability of the electrical parameters.
                                                                       n   Simple Drive Requirements
They are well suited for applications such as switching                n   Ease of Paralleling
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
                                 Parameter                                                                    Units
ID @ VGS = 10V, TC = 25

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