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                                                                                                       PD - 90338E



                                                 IRF250
REPETITIVE A ALANCHE AND dv/dt RATED
            V                              JANTX2N6766
        
HEXFET TRANSISTORS                       JANTXV2N6766
THRU-HOLE (TO-204AA/AE)          [REF:MIL-PRF-19500/543]
                                      200V, N-CHANNEL

Product Summary
 Part Number         BVDSS     RDS(on)     ID
   IRF250             200V     0.085       30A

 The HEXFETtechnology is the key to International
 Rectifier's advanced line of power MOSFET transistors.                         TO-3
 The efficient geometry and unique processing of this latest
 "State of the Art" design achieves: very low on-state resis-
 tance combined with high transconductance; superior re-
 verse energy and diode recovery dv/dt capability.
 The HEXFET transistors also feature all of the well estab-
 lished advantages of MOSFETs such as voltage control,                 Features:
 very fast switching, ease of paralleling and temperature              n   Repetitive Avalanche Ratings
 stability of the electrical parameters.                               n   Dynamic dv/dt Rating
 They are well suited for applications such as switching               n   Hermetically Sealed
 power supplies, motor controls, inverters, choppers, audio            n   Simple Drive Requirements
 amplifiers and high energy pulse circuits.                            n   Ease of Paralleling


Absolute Maximum Ratings
                                 Parameter                                                                    Units
ID @ VGS = 10V, TC = 25

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