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                                                                                                       PD - 90339F



                                                                               IRF350
REPETITIVE A ALANCHE AND dv/dt RATED
            V                                                            JANTX2N6768
                 
HEXFET TRANSISTORS                                                      JANTXV2N6768
THRU-HOLE (TO-204AA/AE)                                        [REF:MIL-PRF-19500/543]
                                                                    400V, N-CHANNEL

Product Summary
 Part Number         BVDSS     RDS(on)     ID
   IRF350             400V     0.300       14A

The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-                                  TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,                  Features:
very fast switching, ease of paralleling and temperature               n   Repetitive Avalanche Ratings
stability of the electrical parameters.                                n   Dynamic dv/dt Rating
                                                                       n   Hermetically Sealed
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio             n   Simple Drive Requirements
amplifiers and high energy pulse circuits.                             n   Ease of Paralleling


Absolute Maximum Ratings
                                 Parameter                                                                    Units
ID @ VGS = 10V, TC = 25

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