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2n6762_irf430


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                                                                                                       PD - 90336F



                                                 IRF430
REPETITIVE A ALANCHE AND dv/dt RATED
            V                              JANTX2N6762
        
HEXFET TRANSISTORS                       JANTXV2N6762
THRU-HOLE (TO-204AA/AE)          [REF:MIL-PRF-19500/542]
                                      500V, N-CHANNEL

Product Summary
 Part Number         BVDSS     RDS(on)     ID
   IRF430             500V      1.5        4.5A

The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-                           TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,                  Features:
very fast switching, ease of paralleling and temperature               n   Repetitive Avalanche Ratings
stability of the electrical parameters.                                n   Dynamic dv/dt Rating
They are well suited for applications such as switching                n   Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio             n   Simple Drive Requirements
amplifiers and high energy pulse circuits.                             n   Ease of Paralleling


Absolute Maximum Ratings
                                 Parameter                                                                    Units
ID @ VGS = 10V, TC = 25



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