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PD- 94016
IRF5803D2
TM
FETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power 1 8
A K
MOSFET and Schottky Diode VDSS = -40V
l Ideal For Buck Regulator Applications A 2 7
K
l P-Channel HEXFET 3 6 RDS(on) = 112m
S D
l Low VF Schottky Rectifier
4 5
l SO-8 Footprint G D
Schottky Vf = 0.51V
Description T op V ie w
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
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