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PD- 91412L
IRF7422D2
FETKY TM MOSFET & Schottky Diode
Co-packaged HEXFET Power A
A
1 8
MOSFET and Schottky Diode A D
VDSS = -20V
Ideal For Buck Regulator Applications A
2 7
D
P-Channel HEXFET 3 6 RDS(on) = 0.09
S D
Low VF Schottky Rectifier
4 5
Generation 5 Technology G D
Schottky Vf = 0.52V
SO-8 Footprint
Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications. SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
Parameter Maximum Units
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