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                                                                                                        PD - 90430C




                                                                                       IRFF130
REPETITIVE A ALANCHE AND dv/dt RATED
            V                                                                      JANTX2N6796
                 
HEXFET TRANSISTORS                                                                JANTXV2N6796
THRU-HOLE (TO-205AF)                                                       REF:MIL-PRF-19500/557
                                                                               100V, N-CHANNEL
Product Summary
 Part Number         BVDSS     RDS(on)     ID
 IRFF130              100V      0.18       8.0A


                
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-                             TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-                        Features:
age control, very fast switching, ease of parelleling                  n   Repetitive Avalanche Ratings
and temperature stability of the electrical parameters.                n   Dynamic dv/dt Rating
They are well suited for applications such as switch-                  n   Hermetically Sealed
ing power supplies, motor controls, inverters, chop-                   n   Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits.                 n   Ease of Paralleling



Absolute Maximum Ratings
                                  Parameter                                                                    Units
ID @ VGS = 10V, TC = 25

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