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Philips Semiconductors                                                                                       Product specification

N-channel enhancement mode                                                                                            IRFZ44NS
TrenchMOSTM transistor

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL                PARAMETER                               MAX.          UNIT
standard level field-effect power
transistor in a surface mounting               VDS                   Drain-source voltage                     55             V
plastic envelope using 'trench'                ID                    Drain current (DC)                       49             A
technology. The device features very           Ptot                  Total power dissipation                 110            W
low on-state resistance and has                Tj                    Junction temperature                    175            

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