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                                                                                                         PD- 91826


                                                                           IRG4CC10UB
 IRG4CC10UB IGBT Die in Wafer Form

                                                C

                                                                    600 V
                                                                    Size 1
                                 G
                                                              Ultra-Fast Speed
                                                                   6" Wafer
                                                E



 Electrical Characteristics ( Wafer Form )
 Parameter                 Description                 Guaranteed (Min/Max)              Test Conditions
 VCE (on)    Collector-to-Emitter Saturation Voltage         4.5V Max.         IC = 1.5A, TJ = 25

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