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                                                                                                        PD- 91757


                                                                          IRG4CC20UB
IRG4CC20UB IGBT Die in Wafer Form


                                               C

                                                                   600 V
                                                                   Size 2
                               G
                                                             Ultra-Fast Speed
                                                                  6" Wafer
                                               E


Electrical Characteristics ( Wafer Form )
Parameter                 Description                 Guaranteed (Min/Max)              Test Conditions
VCE (on)    Collector-to-Emitter Saturation Voltage         4.5V Max.         IC = 10A, TJ = 25

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