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                                                                                                          PD- 91829


                                                                            IRG4CC50SB
IRG4CC50SB IGBT Die in Wafer Form

                                                C

                                                                    600 V
                                                                    Size 5
                                                                Standard Speed
                                 G
                                                                   6" Wafer
                                                E


Electrical Characteristics ( Wafer Form )
Parameter                   Description                 Guaranteed (Min/Max)             Test Conditions
VCE (on)      Collector-to-Emitter Saturation Voltage         4.5V Max.         IC = 10A, TJ = 25

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