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                                                                                                         PD- 91869


                                                                           IRG4CC88KB
IRG4CC88KB IGBT Die in Wafer Form


                                               C
                                                                     600 V
                                                                    Size 8.8
                                                               Ultra-Fast Speed
                                G                             Short Circuit Rated
                                                                    6" Wafer
                                               E


Electrical Characteristics ( Wafer Form )
Parameter                  Description                 Guaranteed (Min/Max)              Test Conditions
VCE (on)     Collector-to-Emitter Saturation Voltage         4.5V Max.         IC = 10A, TJ = 25

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