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PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable
ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
Features
C
q UltraFast IGBT optimized for high switching frequencies n-channel
VCES = 600V
q IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations VCE(ON)typ = 1.5V
q Low gate charge
G
q Low profile low inductance SMD-10 package @VGE = 15V, IC = 50A
E(k)
q Separated control & Power-connections for E
easy paralleling
q Inherently coplanar pins and tab
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED diodes optimized for performance with IGBTs;
Minimized recovery characteristics
q IGBTs optimized for specific application conditions; high input impedance
requires low gate drive power SMD-10
q Low noise and interference
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
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