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                                                                                                   PD - 9.1627A

                                                                              IRG4ZH70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH                                                   Surface Mountable
ULTRAFAST SOFT RECOVERY DIODE                                                       UltraFast CoPack IGBT
Features                                                                        C
q   UltraFast IGBT optimized for high switching frequencies      n-channel
q   IGBT co-packaged with HEXFREDTM ultrafast,
                                                                                                 VCES = 1200V
    ultra-soft recovery antiparallel diodes for use in
    bridge configurations                                                                       VCE(ON)typ = 2.23V
q   Low Gate Charge                                                G
q   Low profile low inductance SMD-10 Package                    E(k)                       @VGE = 15V, IC = 42A
q   Separated control & Power-connections for                                   E
    easy paralleling
q   Inherently good coplanarity
q   Easy solder inspection and cleaning
Benefits
q   Highest power density and efficiency available
q   HEXFRED Diodes optimized for performance with IGBTs.
    Minimized recovery characteristics
q   IGBTs optimized for specific application conditions                                             SMD-10
q   High input impedance requires low gate drive power
q   Less noise and interference
Absolute Maximum Ratings
                            Parameter                                               Max.                      Units
VCES                Collector-to-Emitter Breakdown Voltage                         1200                         V
IC @ TC = 25

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