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                                                                                                                        PD-9.1423


                                                              TARGET                      IRGCC50ME
IRGCC50ME IGBT Die in Wafer Form


                                                      C

                                                                              600 V
                                                                              Size 5
                                                                            Fast Speed
                               G
                                                                             5" Wafer
                                                      E



Electrical Characteristics ( Wafer Form )
Parameter                 Description                          Guaranteed (Min/Max)            Test Conditions
VCE (on)    Collector-to-Emitter Saturation Voltage                  2.5V Max.       IC = 20A, TJ = 25

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