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                                                                                                                               PD-9.1431


                                                               TARGET                              IRGCC20UE
IRGCC20UE IGBT Die in Wafer Form


                                                           C

                                                                                600 V
                                                                                Size 2
                                                                          Ultra-Fast Speed
                                G
                                                                              5" Wafer
                                                           E



Electrical Characteristics ( Wafer Form )
Parameter                 Description                          Guaranteed (Min/Max)            Test Conditions
VCE (on)    Collector-to-Emitter Saturation Voltage                  3.1V Max.       IC = 6.5A, TJ = 25

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