Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors International Rectifier irhf57133se

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.



Image preview - the first page of the document



>> Download irhf57133se documenatation <<

Text preview - extract from the document

                                                                                                   PD - 94334A




RADIATION HARDENED                                                                IRHF57133SE
POWER MOSFET                                                                     130V, N-CHANNEL
THRU-HOLE (TO-39)                                                                  4#
                                                                                       c
                                                                                             TECHNOLOGY



Product Summary
 Part Number Radiation Level            RDS(on) ID
  IRHF57133SE 100K Rads (Si)             0.1 10.5A


                                                                                      TO-39
                                TM
International Rectifier's R5 technology provides          Features:
high performance power MOSFETs for space appli-           n   Single Event Effect (SEE) Hardened
cations. These devices have been characterized for        n   Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
                                                          n   Neutron Tolerant
up to an LET of 80 (MeV/(mg/cm2)). The combination
                                                          n   Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power
                                                          n   Repetitive Avalanche Ratings
losses in switching applications such as DC to DC         n    Dynamic dv/dt Ratings
converters and motor control. These devices retain
                                                          n   Simple Drive Requirements
all of the well established advantages of MOSFETs
                                                          n   Ease of Paralleling
such as voltage control, fast switching, ease of paral-
                                                          n   Hermetically Sealed
leling and temperature stability of electrical param-
eters.

Absolute Maximum Ratings                                                                      Pre-Irradiation
                                 Parameter                                                                  Units
ID @ VGS = 12V, TC = 25

◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo