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Philips Semiconductors                                                                       Product specification

N-channel enhancement mode                                                                                IRLZ34N
Logic level TrenchMOSTM transistor

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode logic             SYMBOL      PARAMETER                           MAX.             UNIT
level field-effect power transistor in a
plastic envelope using 'trench'              VDS         Drain-source voltage                 55                V
technology. The device features very         ID          Drain current (DC)                   30                A
low on-state resistance and has              Ptot        Total power dissipation              68               W
integral zener diodes giving ESD             Tj          Junction temperature                175               

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