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IPA086N10N3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H )(( J
Q ' 3 81>>5< >? B < 5<
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Type #) '
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Parameter Symbol Conditions Value Unit
*#
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9 5
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@175
IPA086N10N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
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Electrical characteristics, 1D V T E>< C ? D G95 C 954
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Static characteristics
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IPA086N10N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
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V =H . V 9H .
( ED 3 1@13 9 5
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.
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5
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( ED 3 81B
@ED 75 Q [__ V 99 . V =H . % -- /+ Z8
Reverse Diode
9 45 3 ? >D EC 6 B 4 3 EB5>D
? 9>? ? G1B B IH % % ,- 6
T 8 T
9 45 @E< 5 3 EB5>D
? C B I H$\aX_Q % % )0(
V =H . I <
9 45 6 B 4 F <175
? ? G1B ? D V H9 % (&1 )&* J
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+ 5F C B ? F I D
5B5 53 5B 9 =5 t ^^ V G . I <445 % .+ % Z_
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V C
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,#
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IPA086N10N3 G
1 Power dissipation 2 Drain current
P `[`4R"T 8# I 94R"T 8 V =H"
.
40 50
35
40
30
25
30
P tot [W]
I D [A]
20
20
15
10
10
5
0 0
0 50 100 150 200 0 50 100 150 200
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