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IPB025N08N3 G
TM Product Summary
"%&$!"# 3 Power-Transistor
V 9H 0( J
Features
R 9H"[Z#$YMd *&- Y"
Q ' 3 81>>5< >? B < 5<
=1< 5F
< 71D 75 ?
Q H3 5<5>D 5 3 81B HR 9H"[Z# @B 4E3 D ( & I9 )*( 6
I?
Q. 5B < G ? >B 9D 5 R 9H"[Z#
5CC 1>3 @B 9 EC 5>79
5F? 9
>55B>7
C1=@< 3 ? 45
5
Q
T ? @5B 9 D
1D 5=@5B EB
>7 1D 5 ?E7(*8C(0C
Q ) 2 655 <
B 514 @< 9 + ? " , 3 ? =@<1>D
1D>7 9
)#
Q * E1<654 13 3 ? B >7 D $
9 9 49 ? ? D 75D 9 9 ?
6 B 1B 1@@<3 1D >
? 89 B G9 >7
Q#451<6 B 7865AE5>3 I C D89 1>4 C 8B >? EC B D91D >
3 I>3 ? 53 93 9
6 ?
Q" 1< 75>655 13 3 ? B >7 D #
? B 49 ?
Type #) ' ' !
Package E=%ID*.+%+
Marking (*-C(0C
Maximum ratings, 1D V T E>< C ? D G95 C 954
T 5C 85B C @53 6 9
Parameter Symbol Conditions Value Unit
*#
? >D EC 4B > 3 EB5>D
9>E? 19 B I9 T 8 T )*( 6
T 8
T )*(
B *#
) E< 54 4B > 3 EB5>D
C 19 I 9$\aX_Q T 8 T ,0(
7I 9 5 C
F 1>3 85 5>5B C>7< @E< 5
1< E 6H I 9
R =H " ),+( Y@
!1D C EB5 F <175
5 ? 3 ? D V =H q*( J
49C@1D
) ? G5B C 9 9 >
? P `[` T 8 T +(( K
( @5B 9 1>4 C ? B D
1D>7 D 175 5=@5B EB
1D 5 T V T _`S
T
# 3 <=1D 3 1D B #' #
9 93 57? I
+ 5F
@175
IPB025N08N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
-85B B 9D 5 :E>3 D > 3 1C
=1< 5CC 1>3 9? 5 R `T@8 % % (&- A'K
=1< 5CC 1>3
-85B B 9D 5 R `T@6 >9 ? @B
=9 =1<6 ? D 9
>D
:E>3 D > 1=2 9
9? 5>D 3 = * 3 ? ? <>7 1B +#
9 51 % % ,(
Electrical characteristics, 1D V T E>< C ? D G95 C 954
T 5C 85B C @53 6 9
Static characteristics
B >C EB5 2 B
19 ? 3 51;4? G> F <175
? D V "7G#9HH V =H . I 9
= 0( % % J
5 8B 8? 4 ? D
!1D D 5C < F <175 V =H"`T# V 9H4V =H I 9 V * *&0 +&-
V 9H . V =H .
05B 71D F <175 4B > 3 EB5>D
? 5 ? D 19 B I 9HH % (&) ) r6
T V T
V 9H . V =H .
% )( )((
T V
T
!1D ? EB5 <
5C 3 51;175 3 EB5>D
B I =HH V =H . V 9H . % ) )(( Z6
B >C EB5 ? >C 1D B 9D 5
19 ? 3 D 5 5CC 1>3 R 9H"[Z# V =H
. I 9
% *&( *&- Y"
V =H . I 9 % *&, +&1
!1D B 9D 5
5 5CC 1>3 R= % *&/ % "
gV 9Hg5*gI 9gR 9H"[Z#YMd
I^MZ_O[ZPaO`MZOQ g R_ 1, )0/ % H
I 9
)#
$ , - 1>4 $ ,
*#
, 55 67EB
9 5
+#
5F3 5 ? > == H == H
== 5@? HI )
9 + G9 3 =* ? >5 <
D8 1I5B V = D 3 ; 3 ? @@5B 51 6 B 19
89 1B ? 4B >
3 ? >>53 D >
) 9 F D 1<9 C 9 19
9? C 5B39 > D< B<
+ 5F
@175
IPB025N08N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#>@ED 1@13 9 5
3 D1>3 C U__ % )(/(( ),*(( \<
V =H . V 9H .
( ED 3 1@13 9 5
@ED D1>3 C [__ % *01( +0,(
f
& " J
+ 5F C D1>C 5B 1@13 9 5
5B5 B 6 3 D1>3 C ^__ % )(( )-(
-EB > 45< D
>? 1I 9
=5 t P"[Z# % *0 % Z_
+ 95 D
C 9 =5 t^ V 99 . V =H
. % /+ %
-EB 6 45< D
>? 6 1I 9=5 t P"[RR# I 9
R =
" % 0. %
1< D
<9 =5 tR % ++ %
!1D 81B 81B D 9D C,#
5 S5 13 5B 9
C3
!1D D C EB5 3 81B
5 ? ? 3 75 Q S_ % -( ./ Z8
5 ? 19
!1D D 4B > 3 81B
75 Q SP % +( ,-
V 99 . I 9
, G9 89 3 81B
D >7
3 75 Q _c % -( /*
V =H D
.
?
5
!1D 3 81B D D
75 ? 1< QS % )-- *(.
!1D @< 51E F <175
5 1D ? D V \XM`QMa % ,&/ % J
( ED 3 81B
@ED 75 Q [__ V 99 . V =H . % *)( */1 Z8
Reverse Diode
9 45 3 ? >D EC 6 B 4 3 EB5>D
? 9>? ? G1B B IH % % )(( 6
T 8 T
9 45 @E< 5 3 EB5>D
? C B I H$\aX_Q % % ,((
V =H . I <
9 45 6 B 4 F <175
? ? G1B ? D V H9 % )&( )&* J
T V T
+ 5F C B ? F I D
5B5 53 5B 9 =5 t ^^ V G . I <4I H % ))+ % Z_
Q ^^ Pi <'Pt
V C
5B5 53 5B 75
+ 5F C B ? F I 3 81B % +)/ % Z8
,#
9 5 ? 71D 75
, 55 67EB
6 B 5 3 81B @1B
1=5D 456>9? >
5B 9 D 9
+ 5F
@175
IPB025N08N3 G
1 Power dissipation 2 Drain current
P `[`4R"T 8# I 94R"T 8 V =H"
.
350 140
300 120
250 100
200 80
P tot [W]
150 I D [A] 60
100 40
50 20
0 0
0 50 100 150 200 0 50 100 150 200
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