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Id\Q IPB034N06N3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H .( J
P 6 AB
A C 91C > =? C A 9 1>4 43 43 , & ) ,
? H>3 53 93 9
6 ? ? 4AE5B
R 9H"[Z#$YMc +&, Y"
P G 5<5>C71C 3 81A GR 9H"[Z# @A 4D C ( &
3 < 5 75 ? 3
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Type #) ' ' !
Package E=%ID*.+%/
Marking (+,C(.C
Maximum ratings, 1CT V S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Parameter Symbol Conditions Value Unit
*#
9
? >C ? D 4A > 3 D A
>D B 19 A5>C I9 T 8 S )(( 6
T 8
S )((
) DB 4A > 3 D A +#
< 54 19 A5>C I 9$\`X^Q T 8 S ,((
E1< 85 5>5A B>7< @DB ,#
1>3 7H 9 5 < 5 E 6H I 9
R =H " ),1 Y@
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5 ? A C V =H p*( J
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? P _[_ T 8 S )./ K
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1C>7 C 175 C
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1C A T V T ^_S
S
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9 93 57? H
)#
$ , - 1>4 $ ,
*#
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+#
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, 55 67D 5 6 A=? A 45C < 9 ? A 9 >
19 >6 =1C
54 ?
,#
9 A ? 5
, 55 67D 5
6 A=? A 45C < 9 ? A 9 >
19 >6 =1C
54 ?
+ 5E
@175
IPB034N06N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
-85A=1 3 1B
5BB1>3 >3 9
? 5 R _T@8 % % (&1 A'K
-85A=13 R _T@6 >9
=9 =1<6 ? C 9
? @A>C
:D C > 1=2 9
>3 9
? 5>C 3 =U 3 ? ? <>7 1A -#
9 51 % % ,(
Electrical characteristics, 1CT V S D 5B ? C F95 B 954
>< B 85A B @53 6
9
Static characteristics
A >B D 3 5 2 A
19 ? A 51;4? F> E? <175
C V "7G#9HH V =H . I 9
= .( % % J
!1C C 5B < E? <175
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V 9H . V =H .
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% )( )((
T V
S
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5B A 51;175 3 D A
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A >B D 3 5 ? >B1C A 9C 5
19 ? A C 5 5BB1>3 R 9H"[Z# V =H
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!1C A 9C 5
5 5BB1>3 R= % )&+ % "
fV 9Hf5*fI 9fR 9H"[Z#YMc
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I 9
-#
5E95 ? > == G == G
== 5@? G )
3 H + F9 3 =* ? >5 <
C8 1H5A V = C 3 ; 3 ? @@5A1A 6 A4A >
89 51 ? 19
?
9 B C
3 ? >>53 C >
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3 > C< A
<
+ 5E
@175
IPB034N06N3 G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#>@D 3 1@13 9 5
C C1>3 C U^^ % 0((( ))((( \<
V =H . V 9H .
( D @D 3 1@13 9 5
C C C1>3 C [^^ % )/(( *+((
f
& " I
+ 5E5A 5 C1>B5A3 1@13 9 5
B A 6 C1>3 C ]^^ % -0 %
-D >? > 45< C
A 1H 9
=5 t P"[Z# % +0 % Z^
+ 95 C
B 9 =5 t] V 99 . V =H
. % ).) %
-D >? 6 45< C
A 6 1H 9 =5 t P"[RR# I 9 R =
" % .+ %
1< C
<9 =5 tR % ). %
13 5AB9 .#
!1C 81A 81A C 9C B
5 S5 3
!1C C B D 3 5 3 81A
5 ? ? A 75 Q S^ % ,+ % Z8
!1C C 4A > 3 81A
5 ? 19 75 Q SP % 1 %
V 99 . I 9
, F9 89 3 81A
C >7
3 75 Q ^b % *0 %
V =H C
.
?
5
!1C 3 81A C C
75 ? 1< QS % 10 )+(
!1C @< 51D E? <175
5 1C C V \XM_QM` % -&, % J
( D @D 3 81A
C C 75 Q [^^ V 99 . V =H . % /1 )(- Z8
Reverse Diode
9 45 3 ? >C D 6 A 4 3 D A
? 9 B ? F1A
>? A5>C IH % % )(( 6
T 8 S
?
9 45 @DB 3 D A
< 5 A5>C I H$\`X^Q % % ,((
V =H . I <
9 45 6 A 4 E? <175
? ? F1A C V H9 % (&1 )&* J
T V S
+ 5E5A 5 A ? E5A C
B 53 H9=5 t ]] V G . #< % ,0 % Z^
Q ]] Pi <'Pt
V B
B 53 H 75
+ 5E5A 5 A ? E5A 3 81A % /+ % Z8
.#
, 55 67D 5
6 A71C 3 81A @1A
9 A ? 5 75 1=5C 456>9? >
5A 9 C 9
+ 5E
@175
IPB034N06N3 G
1 Power dissipation 2 Drain current
P _[_4R"T 8# I 94R"T 8 V =H"
.
200 120
100
160
80
120
P tot [W]
I D [A]
60
80
40
40
20
0 0
0 50 100 150 200 0 50 100 150 200
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