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>> Download ipd60r600e6_2_0 documenatation <<Text preview - extract from the documentMOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOSTM E6 Power Transistor
IPx60R600E6
Data Sheet
Rev. 2.0, 2010-04-12
Final
In d u s tr ia l & M u l ti m a r k e t
600V CoolMOSTM E6 Power Transistor IPD60R600E6, IPP60R600E6
IPD60R600E6
1 Description
CoolMOSTM is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOSTM E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
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