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High Voltage, High Gain                            IXBH 10N170                          VCES = 1700 V
BIMOSFET Monolithic TM
                                                   IXBT 10N170                          IC25     =  20 A
Bipolar MOS Transistor                                                                  VCE(sat) = 3.8 V
Preliminary Data Sheet



Symbol         Test Conditions                                 Maximum Ratings          TO-268 (IXBT)
VCES           TJ = 25

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