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ixbh28n170a_ixbt28n170a


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                                    ADVANCE TECHNICAL INFORMATION



High Voltage, High Gain                              IXBH 28N170A                          VCES               = 1700 V
BIMOSFET Monolithic TM
                                                     IXBT 28N170A                          IC25               =   30 A
Bipolar MOS Transistor                                                                     VCE(sat)           =  6.0 V
                                                                                           tfi                =  50 ns


Symbol         Test Conditions                                    Maximum Ratings          TO-268 (IXBT)
VCES           TJ = 25



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