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ixbh42n170a_ixbt42n170a


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                                          Advance Technical Information


BIMOSFETTM Monolithic                                  IXBH 42N170A                      VCES               = 1700         V
Bipolar MOS Transistor                                 IXBT 42N170A                      IC25               = 42           A
                                                                                         VCE(sat)           = 6.0          V
                                                                                         tfi                = 50           ns



Symbol         Test Conditions                                  Maximum Ratings          TO-268 (IXBT)
VCES           TJ = 25



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