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ixfr32n80p


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PolarHVTM HiPerFET                                   IXFR 32N80P                                  VDSS =             800   V
Power MOSFET                                                                                      ID25 =              20  A
                                                                                                  RDS(on)            290 m 
ISOPLUS247TM
                                                                                                  trr                250 ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

Symbol          Test Conditions                                     Maximum Ratings           ISOPLUS247 (IXFR)
                                                                                                   E153432
VDSS            TJ = 25



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