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ixgh32n90b2d1_ixgt32n90b2d1


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                                         Advance Technical Information


HiPerFASTTM IGBT                               IXGH 32N90B2D1                             VCES                   = 900 V
                                               IXGT 32N90B2D1                             IC25                   = 64 A
with Fast Diode                                                                           VCE(sat)               = 2.7 V
B2-Class                                                                                  tfi typ                = 150 ns
High Speed IGBTs with
Ultrafast Diode

Symbol        Test Conditions                                 Maximum Ratings          TO-247 (IXGH)
VCES          TJ = 25



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