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ixgr32n90b2d1


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                                            Advance Technical Information


HiPerFASTTM IGBT                               IXGR 32N90B2D1                                    VCES            = 900 V
                                                                                                 IC25            = 47 A
with Fast Diode
                                                                                                 VCE(sat)        = 2.9 V
                                                                                                 tfi typ         = 150 ns
Electrically Isolated Base



Symbol        Test Conditions                                    Maximum Ratings              ISOPLUS247 (IXGR)
                                                                                                   E153432
VCES          TJ = 25OC to 150OC                                         900              V
VCGR          TJ = 25OC to 150OC; RGE = 1 M                              900              V
VGES          Continuous



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