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MTD6N20E

Power MOSFET
6 A, 200 V, N-Channel DPAK
  This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for low voltage, high speed switching                                                http://onsemi.com
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where                                 6 AMPERES, 200 VOLTS
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.                                   RDS(on) = 460 mW
Features
                                                                                                                 N-Channel

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