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                                                                                                         M8050
                                                                                                SOT-23 Transistor(NPN)
                                                                                                           SOT-23
                                                1. BASE
                                                2. EMITTER
                                                3. COLLECTOR



Features
         Power dissipation


MARKING: Y11



                                                                                           Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                         Parameter                                   Value               Units
VCBO                     Collector-Base Voltage                                                    40                  V
VCEO                     Collector-Emitter Voltage                                                 25                  V
VEBO                     Emitter-Base Voltage                                                       6                  V
IC                       Collector Current -Continuous                                             0.8                 A
PC                       Collector Power Dissipation                                               0.2                 W
Tj                       Junction Temperature                                                      150                 
Tstg                     Storage Temperature                                                     -55-150               
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                            Symbol          Test   conditions             MIN          MAX        UNIT

     Collector-base breakdown voltage                V(BR)CBO      IC= 100A, IE=0                   40                     V
     Collector-emitter breakdown voltage             V(BR)CEO*     IC=1mA , IB=0                    25                     V
     Emitter-base breakdown voltage                  V(BR)EBO      IE= 100A, IC=0                   6                      V
     Collector cut-off current                         ICBO        VCB= 35V, IE=0                               0.1     A
     Collector cut-off    current                      ICEO        VCE= 20V, IB=0                               0.1     A
                                                       hFE(1)      VCE=1V, IC=5mA                   45
     DC current gain                                   hFE(2)      VCE=1V, IC=100mA                 80          300
                                                      hFE3         VCE=1V, IC=800mA                 40
     Collector-emitter saturation voltage             VCE(sat)     IC= 800mA, IB=80mA                           0.5        V
     Base-emitter saturation voltage                  VBE(sat)     IC=800mA, IB= 80mA                           1.2        V
     Transition frequency                                 fT       VCE=6V, IC= 20mA , f=30MHz      150                 MHz

 * Pulse Test : pulse width  300

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