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                                                                                            MJD112(NPN)
                                                                                      TO-251/TO-525-2L Transistor

                                                                                                   TO-251
                                                     1. BASE


                                                     2. COLLECTOR


                                                     3. EMITTER


                     1   2 3

Features
       Complementary darlington power transistors
       dpak for surface mount applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                   TO-252-2L
 Symbol                      Parameter                         Value        Units
VCBO         Collector-Base Voltage                             100           V
VCEO         Collector-Emitter Voltage                          100           V
VEBO         Emitter-Base Voltage                                 5           V
IC           Collector Current -Continuous                        2           A
PC           Collector Power Dissipation                          1           W
RJC          Thermal resistance, junction to case               6.25        /W
RJA          Thermal resistance, junction to Ambient            71.4        /W        Dimensions in inches and (millimeters)

TJ           Junction Temperature                               150           
Tstg         Storage Temperature                               -55-150        
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                        Symbol            Test     conditions   MIN        TYP       MAX      UNIT

 Collector-base breakdown voltage             V(BR)CBO     IC=1mA,IE=0                 100                           V

 Collector-emitter breakdown voltage          V(BR)CEO     IC =30mA,IB=0               100                           V

 Emitter-base breakdown voltage               V(BR)EBO     IE=5mA,IC=0                  5                            V

 Collector cut-off current                      ICBO       VCB=100V,IE=0                                    20       

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