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                                                                                                    MMBT4401
                                                                                               SOT-23 Transistor(NPN)

                                              1. BASE
                                              2. EMITTER                                             SOT-23
                                              3. COLLECTOR



Features
         Switching transistor

MARKING: MMBT4401=2X


MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                    Parameter                     Value        Units
VCBO        Collector-Base Voltage                         60          V
VCEO        Collector-Emitter Voltage                      40          V               Dimensions in inches and (millimeters)

VEBO        Emitter-Base Voltage                           6           V
IC          Collector Current -Continuous                  600        mA
PC          Collector Power dissipation                    0.3         W
Tj          Junction Temperature                           150         
Tstg        Storage Temperature                       -55to +150       
RJA         Thermal Resistance, junction to Ambient        357      /mW


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                                           Symbol       Test   conditions      MIN     MAX    UNIT

     Collector-base breakdown voltage                              V(BR)CBO   IC= 100A, IE=0           60               V

     Collector-emitter breakdown voltage                           V(BR)CEO   IC= 1mA, IB=0            40               V

     Emitter-base breakdown voltage                                V(BR)EBO   IE= 100A, IC=0            6               V

     Collector cut-off current                                       ICBO     VCB=50 V, IE=0                   0.1      A

     Collector cut-off current                                       ICEO     VCE=30 V, IB=0                   0.1      A

     Emitter cut-off current                                         IEBO     VEB=5V, IC=0                     0.1      A

     DC current gain                                                 hFE      VCE=1V, IC=150mA         100     300

     Collector-emitter saturation voltage                          VCE(sat)   IC=150mA, IB=15mA                0.4      V

     Base-emitter saturation voltage                               VBE(sat)   IC= 150mA, IB=15mA               0.95     V

                                                                              VCE= 10V, IC= 20mA
     Transition frequency                                             fT                               250             MHz
                                                                              f = 100MHz
                             MMBT4401
                          SOT-23 Transistor(NPN)


Typical Characteristics

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