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                                                                                              MMBT3906T
                                                                                           SOT-523 Transistor (PNP)
                                                 1. BASE                                           SOT-523
                                                 2. EMITTER
                                                 3. COLLECTOR


Features
       Epitaxial Planar Die Construction
       Complementary NPN Type Available
       Also Available in Lead Free Version

MARKING:3N


                                                                                        Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                     Parameter                                     Value               Units
VCBO                 Collector-Base Voltage                                                      -40                  V
VCEO                 Collector-Emitter Voltage                                                   -40                  V
VEBO                 Emitter-Base Voltage                                                        -5.0                 V
IC                   Collector Current -Continuous                                               -200                mA
PC                   Collector Power Dissipation                                                 150                mW
RJA                  Thermal Resistance, Junction to Ambient                                     833                /W
TJ                   Operating Temperature                                                       150                 
Tstg                 Storage Temperature                                                       -55-150               
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
              Parameter                          Symbol              Test     conditions           MIN     TYP     MAX      UNIT
 Collector-base breakdown voltage                V(BR)CBO     IC=-10A,IE=0                         -40                       V
 Collector-emitter breakdown voltage             V(BR)CEO     IC=-1mA,IB=0                         -40                       V
 Emitter-base breakdown voltage                  V(BR)EBO     IE=-10A,IC=0                          -5                       V
 Collector cut-off current                         ICBO       VCB=-30V,IE=0                                        -0.1     A
 Emitter cut-off current                           IEBO       VEB=-5V,IC=0                                         -0.1     A
                                                  hFE(1)      VCE=-1V,IC=-0.1mA                    60
                                                  hFE(2)      VCE=-1V,IC=-1mA                      80
 DC current gain                                  hFE(3)      VCE=-1V,IC=-10mA                     100             300
                                                  hFE(4)      VCE=-1V,IC=-50mA                     60
                                                  hFE(5)      VCE=-1V,IC=-100mA                    30
                                                 VCE(sat)1    IC=-10mA,IB=-1mA                                     -0.25     V
 Collector-emitter saturation voltage
                                                 VCE(sat)2    IC=-50mA,IB=-5mA                                     -0.4      V
                                                 VBE(sat)1    IC=-10mA,IB=-1mA                    -0.65            -0.85     V
 Base-emitter saturation voltage
                                                 VBE(sat)2    IC=-50mA,IB=-5mA                                     -0.95     V
 Transition frequency                               fT        VCE=20V,IC=-10mA,f=100MHz            250                      MHz
 Collector output capacitance                      Cobo       VCB=-5V,IE=0,f=1MHz                                   4.5     pF
 Input capacitance                                 Ciob       VEB=-0.5V,IE=0,f=1MHz                                 10      pF
 Noise figure                                      NF         VCE=-5V,Ic=0.1mA,                                     4       dB
                                                              f              
 Delay time                                         td        VCC=-3V, VBE(OFF)=-0.5V                               35      nS
 Rise time                                          tr        IC=-10mA , IB1=-1mA                                   35      nS
 Storage time                                       tS        VCC=-3V, IC=-10mA                                    225      nS
 Fall time                                          tf        IB1= IB2=- 1mA                                        75      nS
                            MMBT3906T
                          SOT-523 Transistor (PNP)

Typical Characteristics

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