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                                                                                                      MMBTA42
                                                                                                  SOT-23 Transistor(NPN)

                                            1. BASE
                                                                                                          SOT-23
                                            2. EMITTER
                                            3. COLLECTOR




Features
       High breakdown voltage
       Low collector-emitter saturation voltage
       Complementary to MMBTA92(PNP)


MARKING:1D
MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                 Parameter                        Value         Units                 Dimensions in inches and (millimeters)
VCBO          Collector-Base Voltage                        300             V
VCEO          Collector-Emitter Voltage                     300             V
VEBO          Emitter-Base Voltage                           5              V
IC            Collector Current -Continuous                  0.3            A
PC            Collector Power Dissipation                   0.35            W
Tj            Junction Temperature                          150             
Tstg          Storage Temperature                      -55-150              

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                            Symbol              Test       conditions              MIN     TYP     MAX     UNIT

Collector-base breakdown voltage                 V(BR)CBO          IC=100A,IE=0                         300                       V

Collector-emitter breakdown voltage              V(BR)CEO          IC=1mA,IB=0                          300                       V

Emitter-base breakdown voltage                   V(BR)EBO          IE=100A,IC=0                          5                        V

Collector cut-off current                             ICBO         VCB=200V,IE=0                                        0.25     A

Emitter cut-off current                               IEBO         VEB=5V,IC=0                                           0.1     A

                                                  hFE(1)           VCE=10V,IC=1mA                        60

DC current gain                                   hFE(2)           VCE=10V,IC=10mA                      100             200

                                                  hFE(3)           VCE=10V,IC=30mA                       60

Collector-emitter saturation voltage              VCE(sat)         IC=20mA,IB=2mA                                        0.2      V

Base-emitter saturation voltage                   VBE(sat)         IC=20mA,IB=2mA                                        0.9      V

Transition frequency                                   fT          VCE=20V,IC=10mA,f=30MHz               50                     MHz
   MMBTA42
SOT-23 Transistor(NPN)
   MMBTA42
SOT-23 Transistor(NPN)

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