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MMDT4403
SOT-363 Dual Transistor (PNP)
SOT-363
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MRKING:K2T
Maximum Ratings (TA = 25 unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.2 W
RJA Thermal Resistance. Junction to Ambient Air 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-35V, IB=0 -0.5 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC= -0.1mA 30
hFE(2) VCE=-1V, IC= -1mA 60
DC current gain hFE(3) VCE=-1 V, IC= -10mA 100
hFE(4) VCE=-2 V, IC= -150mA 100 300
hFE(5) VCE=-2 V, IC= -500mA 20
VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V
VBE(sat)1 IC= -150 mA, IB=-15mA -0.75 -0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC= -500 mA, IB=-50mA -1.3 V
Transition frequency fT VCE= -10V, IC=-20mA,f = 100MHz 200 MHz
Output Capacitance Cob VCB=-10V, IE=0,f=1MHz 8.5 pF
Delay time td VCC=-30V, VBE=-2V,IC=-150mA , 15 nS
Rise time tr IB1=-15mA 20 nS
Storage time tS VCC=-30V, IC=-150mA 225 nS
Fall time tf B1=- IB2=
-15mA 30 nS
MMDT4403
SOT-363 Dual Transistor (PNP)
Typical Characteristics
MMDT4403
SOT-363 Dual Transistor (PNP)
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