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MMDT5551
Dual Transistor (NPN/PNP)
SOT-363
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available(MMDT5401)
Ideal for Medium Power Amplification and Switching
MRKING:K4N
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector- Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 0.05 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.05 A
hFE(1) VCE=5 V, IC=1mA 80
DC current gain hFE(2) VCE=5 V, IC=10mA 80 250
hFE(3) VCE=5 V, IC=50mA 30
VCE(sat)1 IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage
VCE(sat)2 IC=50mA, IB=5mA 0.2 V
VBE(sat)1 IC=10mA, IB=1mA 1 V
Base-emitter saturation voltage
VBE(sat)2 IC=50mA, IB=5mA 1 V
Transition frequency fT VCE=10V, IC=10mA,f=100MHz 100 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Noise Figure NF VCE=5V, IC=0.2mA,
8 dB
RS=1K,f =1kHz
MMDT5551
Dual Transistor (NPN/PNP)
Typical Characteristics
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