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                                                                                            MMST2222A
                                                                                          SOT-323 Transistor (NPN)
                                                                                                   SOT-323
                                             1. BASE

                                             2. EMITTER

                                             3. COLLECTOR



Features
    Epitaxial planar die construction
    Complementary PNP Type available(MMST2907A)
MARKING: K3P



MAXIMUM RATINGS (TA=25 unless otherwise noted)                                        Dimensions in inches and (millimeters)

       Symbol                                 Parameter                                       Value              Units
VCBO                 Collector-Base Voltage                                                     75                 V
VCEO                 Collector-Emitter Voltage                                                  40                 V
VEBO                 Emitter-Base Voltage                                                        6                 V
IC                   Collector Current -Continuous                                             600                mA
PC                   Collector Dissipation                                                     200                mW
TJ                   Junction Temperature                                                      150                    
Tstg                 Storage Temperature                                                    -55to+150                 
ELECTRICAL CHARACTERISTICS (Tamb=25                             unless     otherwise specified)
                Parameter                            Symbol       Test   conditions         MIN         TYP    MAX       UNIT

  Collector-base breakdown voltage                   V(BR)CBO   IC= 10A, IE=0                75                            V
  Collector-emitter breakdown voltage                V(BR)CEO   IC= 10mA, IB=0               40                            V
  Emitter-base breakdown voltage                     V(BR)EBO   IE=10A, IC=0                 6                            V
  Collector cut-off current                            ICBO     VCB=70 V, IE=0                                  100       nA
  Collector cut-off current                            ICEO     VCE=35V , IB=0                                  100       nA
  Emitter cut-off current                              IEBO     VEB= 3V , IC=0                                  100       nA
                                                      hFE(1)    VCE=10V, IC=0.1mA             35
                                                      hFE(2)    VCE=10V, IC= 1mA              50
                                                      hFE(3)    VCE=10V, IC= 10mA             75
  DC current gain
                                                      hFE(4)    VCE=10V, IC= 150mA           100                300
                                                      hFE(5)    VCE=10V, IC= 500mA            40
                                                      hFE(6)    VCE=1V, IC= 150mA             35
                                                                IC=500 mA, IB= 50mA                              1
  Collector-emitter saturation voltage               VCE(sat)                                                             V
                                                                IC=150 mA, IB=15mA                              0.3
                                                                IC=500 mA, IB= 50mA                             2.0
  Base-emitter saturation voltage                    VBE(sat)                                                             V
                                                                IC=150 mA, IB=15mA                              1.2
                                                                VCE=20V, IC= 20mA
  Transition frequency                                  fT                                   300                         MHz
                                                                f=100MHz
  Output Capacitance                                   Cob      VCB=10V, IE= 0,f=1MHz                            8        pF
  Delay time                                            td      VCC=30V, VBE(off)=-0.5V                          10       nS
  Rise time                                             tr      IC=150mA , IB1= 15mA                             25       nS
  Storage time                                          tS      VCC=30V, IC=150mA                               225       nS
  Fall time                                             tf      IB1=-IB2=15mA                                    60       nS
                            MMST2222A
                          SOT-323 Transistor (NPN)


Typical characteristics
  MMST2222A
SOT-323 Transistor (NPN)

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