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mmst2907a


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                                                                                      MMST2907A
                                                                                   SOT-323 Transistor (PNP)

                                            1. BASE                                            SOT-323
                                            2. EMITTER
                                            3. COLLECTOR



Features
     Epitaxial planar die construction
     Complementary PNP Type available(MMST2222A)
MARKING:K3F

MAXIMUM RATINGS(TA=25 unless otherwise noted)

 Symbol                      Parameter                      Value          Units
VCBO           Collector-Base Voltage                           -60            V
                                                                                   Dimensions in inches and (millimeters)
VCEO           Collector-Emitter Voltage                        -60            V
VEBO           Emitter-Base Voltage                              -5            V
IC             Collector Current -Continuous                    -0.6           A
PC             Collector Dissipation                            0.2            W
TJ             Junction Temperature                             150            
Tstg           Storage Temperature                       -55 to +150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                    Symbol        Test     conditions                MIN     TYP     MAX     UNIT
 Collector-base breakdown voltage          V(BR)CBO   IC=-10A,IE=0                          -60                       V
 Collector-emitter breakdown voltage       V(BR)CEO   IC=-10mA,IB=0                         -60                       V
 Emitter-base breakdown voltage            V(BR)EBO   IE=-10A,IC=0                           -5                       V
 Collector cut-off current                   ICBO     VCB=-50V,IE=0                                         -100     nA
 Collector cut-off current                   ICES     VCB=-30V,IB=0                                         -100     nA
 Emitter cut-off current                     IEBO     VEB=-3V,IC=0                                          -100     nA
                                            hFE(1)    VCE=-10V,IC=-0.1mA                     75
                                            hFE(2)    VCE=-10V,IC=-1mA                      100
 DC current gain                            hFE(3)    VCE=-10V,IC=-10mA                     100
                                            hFE(4)    VCE=-10V,IC=-150mA                    100              300
                                            hFE(5)    VCE=-10V,IC=-500mA                     50
                                           VCE(sat)   IC=-150mA,IB=-15mA                                     -0.4     V
 Collector-emitter saturation voltage
                                           VCE(sat)   IC=-500mA,IB=-50mA                                     -1.6     V
                                           VBE(sat)   IC=-150mA,IB=-15mA                    -0.6             -1.3     V
 Base-emitter saturation voltage
                                           VBE(sat)   IC=-500mA,IB=-50mA                                     -2.6     V
 Transition frequency                          fT     VCE=-20V,IC=-50mA,f=100MHz            200                     MHz
 Output capacitance                         Cobo      VCB=-10V,IE=0,f=0.1MHz                                  8      pF
 Input capacitance                           Cib      VEB=-2V,IC=0,f=0.1MHz                                  30      pF
 Delay time                                    td     VCC=-30V,VBE(off)=-1.5V,IC=-150mA                      10      nS
 Rise time                                     tr     IB1==- 15mA                                            40      nS
 Storage time                                  tS                                                            80      nS
                                                      VCC=-30V,IC=-150mA,IB1=-IB2=-15mA
 Fall time                                     tf                                                            30      nS
  MMST2907A
SOT-323 Transistor (PNP)
  MMST2907A
SOT-323 Transistor (PNP)



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